SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES

We have studied metal-silicon carbide barrier height for various struc tures. Material of both n- and p-type conductivity 3C, 6H and 4H varie ties have been used with Mo or Au Schottky barriers. In some cases, we observe a dependence of the barrier height on the uncompensated impur ity concentration which cannot be explained in terms of the simple ima ge force barrier lowering. It demands to take into account the total c harge balance at the metal-semiconductor interface. The analysis of th ese data, together with other data on the surface barrier height, give s useful information for the development of high temperature devices. (C) 1997 Elsevier Science S.A.