SILICON-CARBIDE FOR HIGH-TEMPERATURE MICROELECTRONICS - RECENT ADVANCES IN MATERIAL GROWTH VIA GAS-SOURCE MBE AND DEVICE RESEARCH

Thin films of silicon carbide (SIG) have been grown at 1000-1500 degre es C on vicinal and on-axis alpha(6H)-SiC(0001) substrates by gas-sour ce molecular beam epitaxy (GSMBE). Growth using only SiH4 and C2H4 res ulted in 3C-SiC(111) epilayers under all deposition conditions and sub strate orientations. With the addition of H-2, films of 6H-SiC(0001) w ere deposited on the vicinal substrates at deposition temperatures gre ater than or equal to 1350 degrees C. Kinetic analysis showed all depo sitions to be surface reaction controlled. In situ doping was achieved by intentional introduction of nitrogen and aluminum into the growing crystals. SiC-based microelectronic devices operable at elevated temp eratures, including several types of power metal oxide semiconductor f ield effect transistors (MOSFETs). bipolar transistors, and thyristors have been fabricated. The properties of selected devices and the circ uits made from them are described. (C) 1997 Elsevier Science S.A.