LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES

Authors
VONKAMIENSKI EGS LEONHARD C PORTHEINE F GOLZ A KURZ H
Citation
Egs. Vonkamienski et al., LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 263-266
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
263 - 266
Database
ISI
SICI code
0921-5107(1997)46:1-3<263:LSOGON>2.0.ZU;2-A
Abstract
A large part of interface states in thermal oxides on n- and p-type 6H -SiC can be passivated by introducing hydrogen to the fabrication proc ess. The oxide trap densities of passivated and unpassivated samples a re investigated by charge injection experiments using Fowler Nordheim and photo-injection techniques. (C) 1997 Published by Elsevier Science S.A.