A STUDY OF THE CONTACT POTENTIAL DIFFERENCE IN P-N 6H-SIC STRUCTURES GROWN BY VARIOUS TECHNIQUES

The aim of the present work is to compare experimental values of the d iffusion potentials (U-d) found from capacity-voltage characteristics of 6H-SiC diodes with calculated values obtained using known parameter s from the literature or determined by other experimental techniques. Value of U-d of 6H-SiC p-n structures produced by different technologi cal methods have been investigated in the temperature range 300-800 K. It was shown that the dependence U-d = F(T) is similar to the one fou nd in other semiconductor materials. It is shown that the calculated v alue for U-d for all types of p-n structures has better agreement with experiments when using for the forbidden gap the value 2.86 eV, inste ad of the usual value equal to 3.02 eV. (C) 1997 Published by Elsevier Science B.V.