GROWTH AND INVESTIGATION OF THE BIG AREA LELY-GROWN SUBSTRATES

Authors
LEBEDEV AA TREGUBOVA AS CHELNOKOV VE SCHEGLOV MP GLAGOVSKII AA
Citation
Aa. Lebedev et al., GROWTH AND INVESTIGATION OF THE BIG AREA LELY-GROWN SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 291-295
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
291 - 295
Database
ISI
SICI code
0921-5107(1997)46:1-3<291:GAIOTB>2.0.ZU;2-1
Abstract
6H-SiC substrates grown by Lely method and modified Lely (LM) methods have been studied by X-ray diffractometry and X-ray topography. It has been shown that structural perfection of Lely substrates is significa ntly higher than that of LM substrates: the former have a dislocation density of 10(1)-10(3) dis cm(-2) (as compared with 10(3)-10(5) dis cm (-2) for latter). Our experiments show that with the use of modernized growth equipment it is possible to obtain Lely substrates with high s tructural perfection and an area equal to that of LM substrates (1-1.5 '' diameter). (C) 1997 Published by Elsevier Science S.A.