GROWTH AND INVESTIGATION OF EPITAXIAL 6H-SIC LAYERS OBTAINED BY CVD ON LELY-GROWN SUBSTRATES

The aim of the present work was: (1) to grow SiC epilayers on Lely-gro wn 6H-SiC substrates (characterized at present by the highest crystall ine perfection) and (2) to investigate the quality of the epilayers. T he growth of the SiC epitaxial layers was performed in the system SiH4 -CH4-H-2. It was found that the crystal perfection of the on-grown epi layers is not much less than that of the Lely substrate. To study the electrical properties of the obtained epitaxial layers, Schottky barri ers were formed on their surfaces with the use of various metals. In l ayers grown on sublimation- and hydrogen-etched substrates, the concen tration Nd-Na was similar to 6 x 10(16)-3 x 10(17) cm(-3) The thicknes s of the intermediate region between substrates and epilayers was smal ler than 0.01 mu m. (C) 1997 Elsevier Science S.A.