DIFFERENT MACROSCOPIC APPROACHES TO THE MODELING OF THE SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALS

Different macroscopic models such as thermodynamics, heat transfer and mass transport have been applied to the simulation of the growth of s ingle SiC crystals prepared according to the so-called 'modified Lely method'. Thermodynamic modelling has been used to determine the most i mportant reactive gaseous and solid species please nt under equilibriu m conditions, Pleat transfer modelling (including induction heating, r adiation with multireflection, conviction and conduction) has been per formed to calculate the actual temperatures inside the reactor. Differ ent temperature fields have been obtained depending on the level of co mplexity of the thermal modelling. Finally, mass transport modelling p rovided the chemical fields of the process and calculated deposition r ates which were found to be close to the experimental ones. It appears that the solid SiC surface shape after growth depends on the temperat ure gradient existing along the seed. (C) 1997 Elsevier Science S.A.