CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC

Deep level defects in electron-irradiated 4H-SiC epilayers grown by ch emical vapor deposition (CVD were studied using deep level transient s pectroscopy (DLTS). DLTS measurements performed on electron-irradiated p (+) n junctions in the temperature range 100-750 K have revealed se ven electron traps. Most of these defects were already observed at a d ose of irradiation as]oa as 5 x 10(13) cm(-2). Dose dependence and ann ealing behaviour of the defects were investigated. For two of these el ectron traps, the capture cross section was measured. (C) 1997 Elsevie r Science S.A.