SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS

Authors
DICIOCCIO L LETERTRE F LETIEC Y PAPON AM JAUSSAUD C BRUEL M
Citation
L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 349-356
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
46
Issue
1-3
Year of publication
1997
Pages
349 - 356
Database
ISI
SICI code
0921-5107(1997)46:1-3<349:SOIFBT>2.0.ZU;2-I
Abstract
For the first time silicon carbide on insulator structures (SiCOI) wer e achieved by the Smart-Cut (R) process. These structures were formed on polycrystalline SiC and on silicon substrates. The technological so lutions used and the structures obtained are presented in this paper. (C) 1997 Published by Elsevier Science S.A.