Cavity detuning effects in semiconductor microcavity light emitting diodes

Citation
Ar. Pratt et al., Cavity detuning effects in semiconductor microcavity light emitting diodes, J APPL PHYS, 87(12), 2000, pp. 8243-8250
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
12
Year of publication
2000
Pages
8243 - 8250
Database
ISI
SICI code
0021-8979(20000615)87:12<8243:CDEISM>2.0.ZU;2-0
Abstract
Light output power versus current, emission spectroscopy and far-field emis sion patterns have been used to characterize microcavity light emitting dio des (MC-LEDs). Evidence that microcavity effects lead to enhanced emission properties is provided by changes in the total emitted light output power, as well as the electroluminescence spectra of the MC-LEDs. Compared to a co nventional noncavity type LED structure, enhanced efficiency and narrow spe ctral linewidths have been observed for the MC-LEDs over a wide range of ca vity detunings and cavity Q values. Evidence that control of the cavity det uning leads to temperature insensitive output characteristics is provided b y changes in the temperature dependence of the slope efficiencies extracted from the light output versus current characteristics. Variations in the em itted radiation patterns as a function of current injection are also report ed demonstrating the important role of the cavity detuning on the emission properties of MC-LEDs. (C) 2000 American Institute of Physics. [S0021-8979( 00)08212-8].