Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique

In this work, we investigate (i) the interaction of silicon interstitial at oms during thermal oxidation of silicon with a dislocation loop layer posit ioned at different distances from the surface as well as (ii) the interacti on between two loop layers positioned at different depth distances. In both experiments, interstitials are injected by surface oxidation. The results show a linear dependence of the injection flux of interstitials with the in verse of the distance of the loop layer from the surface and a small leakag e (16%) of the injected interstitials escaping from the upper and becoming bounded to the deeper loop layer. The experiments are performed using the w afer bonding technique that allows versatility on their design. (C) 2000 Am erican Institute of Physics. [S0021-8979(00)04512-6].