Unstable states of antiferroelectric liquid crystal devices

Citation
La. Judge et al., Unstable states of antiferroelectric liquid crystal devices, J APPL PHYS, 87(12), 2000, pp. 8433-8439
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
12
Year of publication
2000
Pages
8433 - 8439
Database
ISI
SICI code
0021-8979(20000615)87:12<8433:USOALC>2.0.ZU;2-Q
Abstract
The unstable states of an antiferroelectric liquid crystal cell have been i nvestigated, mapping out the unstable branch of the hysteresis loop. It was found that the unstable branch extended over a much greater voltage range than the quasistatic hysteresis loop of the cell. The narrow hysteresis loo p is attributed to the influence of defects within the cell, which can seed switching in the presence of a small energy barrier between initial and fi nal states. The measurements indicate that the ferroelectric state may be f undamentally stable at 0 V. (C) 2000 American Institute of Physics. [S0021- 8979(00)01011-2].