Y. Oyama et al., X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grownby intermittent injection of TEGa/AsH3 in ultra high vacuum, J CRYST GR, 213(3-4), 2000, pp. 221-228
This paper reports the results of X-ray multi-crystal diffractometry analys
is of heavily Te-doped (1 0 0)-GaAs epitaxial thin layers grown by intermit
tent injection of TEGa/AsH3 in an ultra high vacuum. It is shown that the d
ifferential lattice strain in < 100 > direction was increased monotonically
with increase of impurity concentration in the range of 5 x 10(19)-5 x 10(
20) cm(-3), but full-width at half-maximum of rocking curve was kept consta
nt at about 360 s of are. Independent of the impurity concentration, reflec
tion X-ray topography does not reveal the formation of misfit dislocation.
Reciprocal lattice mapping method is also applied to clarify the origin of
double peaks in X-ray rocking curve. In addition with electrical measuremen
t results, defect formation mechanism in heavily Te-doped GaAs thin layers
are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.