Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration

Dislocation-free Si crystals have been grown successfully from heavily B-do ped Si melts by Czochralski (CZ) method without the Dash necking process. N o dislocation was introduced in the heavily B-doped Si seed during dipping and no dislocation was generated in the grown crystal due to lattice misfit between the seed and grown crystal when the B concentration is the same in both the Si seed and grown crystal. These results show that the Dash necki ng process is unnecessary in heavily B-doped Si crystal growth. It is found that the limit of the B concentration in the Si seed for growing dislocati on-free CZ-SI crystals without Dash necking is in the order of 10(18) atoms /cm(3), corresponding to a resistivity of several tens of mn cm. (C) 2000 E lsevier Science B.V. All rights reserved.