Preparation and characterization of Pb(Zr,Ti)O-3 thin films by metalorganic chemical vapor deposition using a solid delivery system

Pb(Zr,Ti)O-3 (PZT) thin films were deposited on Pt/SiO2/Si substrates by me talorganic chemical vapor deposition using solid delivery system. The effec ts of deposition parameters such as the substrate temperature, the concentr ation of Pb precursor in the precursor mixtures, and the reactor pressure o n the structural and electrical properties of PZT thin films were investiga ted. To obtain single-phase PZT thin films, the optimal range of the substr ate temperature should be between 600 and 650 degrees C. The PbO content in PZT thin films was proportional to the fraction of Pb in the precursor mix ture below 550 degrees C, but it was independent of the fraction of Pb in t he mixture above 600 degrees C, With the increment of the reactor pressure, Zr contents in PZT thin films were increased, and the Pb/(Zr + Ti) ratio b ecame more stoichiometric so that the ferroelectric properties were improve d.