Preparation, property, and mechanism studies of amorphous ferroelectric (Ba, Sr)TiO3 thin films for novel metal-ferroelectric-metal type hydrogen gassensors

Citation
W. Zhu et al., Preparation, property, and mechanism studies of amorphous ferroelectric (Ba, Sr)TiO3 thin films for novel metal-ferroelectric-metal type hydrogen gassensors, J MATER RES, 15(6), 2000, pp. 1291-1302
Citations number
48
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
6
Year of publication
2000
Pages
1291 - 1302
Database
ISI
SICI code
0884-2914(200006)15:6<1291:PPAMSO>2.0.ZU;2-0
Abstract
Ferroelectric (Ba0.67Sr0.33)TixO3 (BST) thin films with x = 0.98, 1.00, 1.0 2, and 1.04 were prepared by the sol-gel technology, and their thermal, str uctural, dielectric, and gas sensing properties were systematically charact erized. The amorphous (Ba0.67Sr0.33)TixO3 thin film capacitive devices were made on Si substrate to detect hydrogen gas and to study hydrogen-induced interfacial polarization potential. Experimental results showed that the Sc hottky I-V behavior appears in these Pd/amorphous BST thin film/metal capac itive devices and that enhanced interfacial dipole potentials as large as 4 .5 V at 1000 ppm hydrogen gas in air were newly observed, which is about 7 times larger than the best value reported under similar testing conditions. It was clearly shown that the hydrogen-induced interfacial polarization po tential is closely correlated with the microstructure of ferroelectric thin films and the enhancement of this interfacial polarization potential is ma inly attributed to the high dielectric constant of amorphous ferroelectric thin films. A simple hydrogen interface-blocking model is also presented to explain this interesting phenomenon.