W. Wierzchowski et al., Numerical simulation of Bragg-case section topographic images of dislocations in silicon, J PHYS D, 33(10), 2000, pp. 1230-1238
Synchrotron white beam with a wavefront limited by a 5 mu m slit was used f
or obtaining the Bragg-case section patterns in silicon substrates and epit
axial layers. The section images contained various interference fringes, su
ch as the Uragami fringes and fringes caused by crystal curvature. The syst
em of fringes connected with individual defects was also observed.
The experimental images were compared with simulated theoretical images obt
ained by numerical integration of the Takagi-Taupin equations. A reasonably
good correspondence was obtained for dislocations inclined to the surface
and misfit dislocations. The elements of the image were analysed using the
visualization of \ D-h\(2) and \ D-o\(2) intensities in the plane of diffra
ction, where an additional amount of transmitted wave intensity indicated t
he decomposition of wavefields or the reflection of the redirected waves fr
om the surfaces. Comparative studies of simulated precipitation images and
modification of dislocation images caused by curvature and by the diffusion
of an epitaxial junction were also performed.