Refinement of beta-Si3N4 single crystal grown from silicon melt

Authors
Yamamoto, Y Hirosaki, N Ishikawa, I Ye, JP Matsuo, K Furuya, K Munakata, F Akimune, Y
Citation
Y. Yamamoto et al., Refinement of beta-Si3N4 single crystal grown from silicon melt, J CERAM S J, 108(5), 2000, pp. 515-517
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
ISSN journal
09145400 → ACNP
Volume
108
Issue
5
Year of publication
2000
Pages
515 - 517
Database
ISI
SICI code
0914-5400(200005)108:5<515:ROBSCG>2.0.ZU;2-1
Abstract
Silicon powder in a reaction-sintered silicon nitride crucible was heated a t 1600 degrees C in a nitrogen atomosphere. Clustered beta-Si3N4 Single cry stals were obtained in residual silicon metal after cooling, The silicon re siduals were dissolved by chemical purification using a mixture of aqueous HF and HNO3, and subsequently treated and with H2SO4, Scanning electron mic roscopy observation showed that large beta-Si3N4 crystals without Si residu als could be successfully separated by this process.