Application of surface techniques to study oxide growth processes

Surface-analytical techniques are useful to characterize oxide films and to study oxide growth processes on metals and semiconductors. This paper will summarize work at NRC on the high-temperature oxidation of both FeCrAl all oys and silicon, as well as the thermal and UV ozone oxidation of III-V sem iconductors. In these studies, surface-analytical data complemented by info rmation provided by other techniques, e.g., TEM, lead to a better understan ding of oxidation phenomena and oxide growth mechanisms for a wide variety of materials and applications.