Preparation of highly (100)-oriented PLCT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process

Authors
Fu, XR Li, JH Song, ZT Zhu, XR Lin, CL
Citation
Xr. Fu et al., Preparation of highly (100)-oriented PLCT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process, MATER LETT, 44(2), 2000, pp. 70-74
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
44
Issue
2
Year of publication
2000
Pages
70 - 74
Database
ISI
SICI code
0167-577X(200006)44:2<70:POH(PT>2.0.ZU;2-Y
Abstract
Highly (100)-oriented lanthanum- and calcium-modified PbTiO3 (PLCT68/17/15 and PLCT80/10/10) ferroelectric thin films were successfully prepared on Pt /Ti/SiO2/Si substrates by a simple sol-gel spin-on process. The effects of thin film composition, film thickness and annealing temperature on the (100 ) orientation were reported. Highly (100)-oriented PLCT80/10/10 and PLCT68/ 17/15 thin films with pure perovskite could be obtained with around 0.3 and 0.45 mu m thicknesses, respectively, when annealed at 600 degrees C for 1 h. The films' crystallization and orientation were studied using the techni ques of X-ray diffraction (XRD) and atomic force microscopy (AFM). (C) 2000 Elsevier Science B.V. All rights reserved.