M. Girtan et al., The influence of preparation conditions on the electrical and optical properties of oxidized indium thin films, MAT SCI E B, 76(2), 2000, pp. 156-160
Highly conductive indium oxide thin films (rho = 5 x 10(-3) Omega cm) have
been prepared by thermal oxidation in an open atmosphere of indium films de
posited in vacuum by evaporation. The rate of indium film deposition was hi
gh (5 Angstrom, s(-1)), and the oxidation has been carried out by exposing
the samples to the atmosphere directly at high temperature (500 degrees C)
for different times. Structural, optical and electrical properties of these
samples were investigated. Films exhibit a (111) preferred orientation, Th
e value of the transmittance coefficient in the visible region of the spect
rum was low (50%) but, concerning the electrical properties, an interesting
behaviour was observed: at temperatures above room temperature the electri
cal resistance depends on the sense of the electrical current flow. (C) 200
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