Valence band photoemission behavior of Pr1-xSrxMnO3

Authors
Ibrahim, K Liu, FQ Qian, HJ Guo, L Xian, DC Xiong, GC Wu, SC
Citation
K. Ibrahim et al., Valence band photoemission behavior of Pr1-xSrxMnO3, MAT SCI E B, 76(1), 2000, pp. 14-17
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
76
Issue
1
Year of publication
2000
Pages
14 - 17
Database
ISI
SICI code
0921-5107(20000615)76:1<14:VBPBOP>2.0.ZU;2-1
Abstract
Valence band photoemission experiments on Pr1-xSrxMnO3 polycrystalline syst em with x ranging from 0.0 to 0.4 show that the density of states of the ba nds appearing in the ranges between Fermi level and similar to 12 eV below Fermi level have a substantial change with the doping level x. These featur es are discussed in terms of charge transfer in the ground states of Pr1-xS rxMnO3 system. A nonlinear charge transfer with the doping amount x is evid enced and a possible second order phase transition mediated by the charge t ransfer is proposed. (C) 2000 Elsevier Science S.A. All rights reserved.