Study on the I-V characteristics of ferroelectric thin film systems with the structure of MFSM

Ferroelectric thin film systems with multilayer structure, Au/PZT/p-Si, and Au/PZT/BIT/p-Si, were fabricated by using pulsed laser deposition (PLD) te chnique. Ferroelectric PZT and BIT layers with the thickness of 400 and 100 nm, respectively, were grows on (100) oriented p-type silicon substrates. Electrical properties of the metal/ferroelectric/semiconductor/metal (MFSM) structures were characterized through the measurements of bias voltage dep endence of current. The conductivity behavior is discussed. The results sug gest that the growth of the BIT buffer layer has decreased the serious inte raction and interdiffusion in the PZT/p-Si interface. The I-V hysteresis lo op is large enough to identify the current of roading '1' and '0', respecti vely, indicating that the access function is realized in our ferroelectric thin film systems. (C) 2000 Elsevier Science S.A. All rights reserved.