Optimization of the writing and erasing characteristics of MO tri-layered films using the non-magnetic intermediate layer

Authors
Ke, W Li, ZY Xiong, R Yang, XF Hu, ZQ
Citation
W. Ke et al., Optimization of the writing and erasing characteristics of MO tri-layered films using the non-magnetic intermediate layer, MAT SCI E B, 76(1), 2000, pp. 53-55
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
76
Issue
1
Year of publication
2000
Pages
53 - 55
Database
ISI
SICI code
0921-5107(20000615)76:1<53:OOTWAE>2.0.ZU;2-C
Abstract
Exchange coupling of tri-layered films using the non-magnetic intermediate layer had been studied. Based on the magnetization reversal mechanisms of e xchange coupled double-layered (ECDL) films, the exchange coupling energy w as calculated. Temperature dependence of the exchange coupling energy was d iscussed. Furthermore, influence of the thickness of the intermediate AIN l ayer on the exchange coupling energy was studied in detail. The results sho wed that the exchange coupling energy could be adjusted by variation of the thickness of the AIN layer. Finally, the writing and erasing characteristi cs of TbFeCo/AlN/DyFeCo films has been proposed. (C) 2000 Elsevier Science S.A. All rights reserved.