Study of As precipitates in LEC SI-GaAs wafer by Raman probe

Authors
Zhang, FY Tu, HL Wang, YH Qian, JY Wang, HT Wang, J Song, P
Citation
Fy. Zhang et al., Study of As precipitates in LEC SI-GaAs wafer by Raman probe, MAT SCI E B, 75(2-3), 2000, pp. 139-142
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
75
Issue
2-3
Year of publication
2000
Pages
139 - 142
Database
ISI
SICI code
0921-5107(20000601)75:2-3<139:SOAPIL>2.0.ZU;2-7
Abstract
As precipitates in the subsurface layer of LEC SI-GaAs substrates are chara cterized by Raman microprobe with a spatial resolution of 2 mu m. We find t hat the LO line of GaAs at the As precipitate broadens asymmetrically becau se As precipitates and dislocations introduce disorder in the crystal. The compressive strain introduced by As precipitates results in the central fre quency of LO line shifting to the blue. (C) 2000 Elsevier Science S.A. All rights reserved.