Directional solidifications were carried out by vertical Bridgman method wi
th GaAs seed and In0.3Ga0.7As feed. Experimental results show that seeding
was mon successful in the case of low temperature gradient than a steep one
. Lattice mismatch of the seed and the grown crystal is small. Single cryst
als were reproducibly obtained at low temperature gradient and at small lat
tice mismatch in these experiments. The grown single crystal is longer than
20 mm with a diameter of 14.5 mm. Indium concentration along the growth ax
is increased as crystal growth proceeded, which agrees with a compositional
profile modeled from the InAs-GaAs pseudo-binary phase diagram. Electron m
obility of initial grown crystals obtained at lower temperature gradient is
higher than that of crystals grown at higher temperature gradient. (C) 200
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