Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Authors
Buyanova, IA Chen, WM Monemar, B Xin, HP Tu, CW
Citation
Ia. Buyanova et al., Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 166-169
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
75
Issue
2-3
Year of publication
2000
Pages
166 - 169
Database
ISI
SICI code
0921-5107(20000601)75:2-3<166:PCOGSG>2.0.ZU;2-L
Abstract
A number of optical spectroscopies, including photoluminescence (PL), PL ex citation and cathodoluminescence, are employed for characterization of GaNA s epilayers and GaAs/GaNxAs1-x quantum well structures grown by gas source molecular beam epitaxy at low temperature. The existence of strong potentia l fluctuations in the band edge of the GaNAs alloy is concluded, even for t he samples with high optical quality, from a detailed analysis of the chara cteristic properties of the GaNAs-related PL emission. Based on the observe d similarity in the PL properties between the GaNAs epilayers and the QW st ructures, the potential fluctuations are suggested to be mainly due to comp osition disorder and strain nonuniformity of the alloy, (C) 2000 Elsevier S cience S.A. All rights reserved.