Citation
Wk. Choi et al., Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy films, MAT SCI E B, 75(2-3), 2000, pp. 184-186
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
75
Issue
2-3
Year of publication
2000
Pages
184 - 186
Database
ISI
SICI code
0921-5107(20000601)75:2-3<184:SCORTO>2.0.ZU;2-U
Abstract
The properties of as-prepared and rapidly thermally oxidized Si1-x-yGexCy.
alloy films have been examined using infrared, X-ray diffraction, and Raman
techniques. The structural properties of the oxidized Si1-x-yGexCy film de
pend on the type of strain of the as-prepared film. For compressive or full
y compensated films, the oxidation process drastically reduces the carbon c
ontent such that the oxidized film compositions resemble that of Si1-xGex f
ilms. For tensile films, two broad layers co-exist in the oxidized films, o
ne with a carbon content higher and the other lower than that required for
full strain compensation. (C) 2000 Elsevier Science S.A. All rights reserve
d.