Raman characterization of ion beam etched Hg1-xCdxTe surface

We report Raman scattering (RS) measurements at 300 K from Hg1-xCdxTe (x si milar to 0.48), which was etched for a few minutes by an Ar+ beam. Features of HgTe-like transverse optical (TO2) mode at 120 +/- 1 cm(-1) and longitu dinal optical (LO2) mode at 140 +/- 1 cm(-1) are identified. We identified a feature observed at 135 +/- 1 cm(-1) as clustering mode, which represents the integrity of the crystal lattice. We measured the Raman scattering on a beveled surface in line-scanning manner; the results showed that ion beam induced damage extends to a depth of more than 1 mu m, while the ion beam' s penetrating depth is no more than 10 nm. (C) 2000 Published by Elsevier S cience S.A. All rights reserved.