Growth of GaN on Si substrates using BP thin layer as a buffer

Authors
Nishimura, S Terashima, K
Citation
S. Nishimura et K. Terashima, Growth of GaN on Si substrates using BP thin layer as a buffer, MAT SCI E B, 75(2-3), 2000, pp. 207-209
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
75
Issue
2-3
Year of publication
2000
Pages
207 - 209
Database
ISI
SICI code
0921-5107(20000601)75:2-3<207:GOGOSS>2.0.ZU;2-W
Abstract
BP epitaxial layer has been successfully grown on silicon(100) substrates w ith a dimension of 10 x 10 mm(2). The layer obtained is markedly flat and c ontinuous. The thickness was 4.56 mu m during 2 h growth process. To elucid ate the possibility to grow a zinc blende GaN layer on BP, epitaxial growth of GaN has been carried out. A 100% cubic GaN was successfully obtained. ( C) 2000 Elsevier Science S.A. All rights reserved.