The doping process of p-type GaN films

The formation of p-type GaN him is a key technology in developing optoelect ronic devices. P-type doping (concentration similar to 10(17) cm(-3)) has b een achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diff used GaN films also have p-type conductivity with carrier concentration abo ut 10(17) cm(-3) and a mobility of 10 cm(2) V-1 s(-1). For the as-grown Mg- doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carri er concentrations. For Mg-diffused GaN, the PL spectra shows only a broad v iolet emission for samples diffused at 900-1100 degrees C. (C) 2000 Elsevie r Science S.A. All rights reserved.