Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) Si-28 ions

Single crystal GaAs substrates implanted with 100 MeV Si-28 ions have been investigated by optical transmission over photon energy range 0.7-1.4 eV. T he alpha x values increase with increasing dose until samples are nearly op aque (alpha x > 1) over the entire measurement photon energy range at a dos e of 5 x 10(14) ions/cm(2) Damage distribution is probed by etching the sam ple and shows presence of an amorphous layer at a depth of 24-25 mu m. Tran smission recovers substantially after etching beyond 25.6 mu m. Annealing e xperiments show that a significant damage recovery occurs over the temperat ure range 200-500 degrees C with an activation energy 0.2 eV. However, some residual damage remains even after annealing at 700 degrees C. (C) 2000 El sevier Science B.V. All rights reserved.