1.3 mu m integrated superluminescent light source

In order to increase the optical output power of semiconductor superlumines cent devices, a direct coupling method has been used to integrate, monolith ically, the superluminescent diode (SLD) with a semiconductor optical ampli fier (SOA). By this means, a 1.3 mu m InGaAsP/InP integrated superluminesce nt light source was fabricated. High superluminescent output power was obta ined at pulsed condition. An efficient operating scheme was discovered thro ugh the discussion of the gain, it not only increases the output power, but also stabilizes the performance of the whole device. (C) 2000 Elsevier Sci ence B.V. All rights reserved.