High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers

Authors
Lee, CT Tsai, CD Shiao, HP
Citation
Ct. Lee et al., High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers, OPT MATER, 14(3), 2000, pp. 251-253
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
14
Issue
3
Year of publication
2000
Pages
251 - 253
Database
ISI
SICI code
0925-3467(200007)14:3<251:HPOSBF>2.0.ZU;2-9
Abstract
We present the characteristics of Cu Schottky contacts on wide band gap InG aP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Sc hottky diodes. With sulfur treatment, the performance of Schottky diodes co mpared with samples without sulfur treatment is improved. However, a drasti c degradation of the performances was observed in samples annealed at 500 d egrees C. (C) 2000 Elsevier Science B.V. All rights reserved.