Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

Authors
Li, C Yang, QQ Wang, HJ Cheng, BW Yu, JZ Wang, QM
Citation
C. Li et al., Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells, OPT MATER, 14(3), 2000, pp. 267-269
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
14
Issue
3
Year of publication
2000
Pages
267 - 269
Database
ISI
SICI code
0925-3467(200007)14:3<267:COCWPU>2.0.ZU;2-N
Abstract
We report on the fabrication of circular waveguide photodetectors with a re sponse near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The q uantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelengt h at 1.3 mu m The frequency response of the photodetectors is simulated. Th e emciency-bandwidth product of the circular waveguide photodetectors is im proved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rig hts reserved.