The effect of electron pressure on suspended helium films

Citation
A. Valkering et al., The effect of electron pressure on suspended helium films, PHYSICA B, 284, 2000, pp. 172-173
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
1
Pages
172 - 173
Database
ISI
SICI code
0921-4526(200007)284:<172:TEOEPO>2.0.ZU;2-S
Abstract
(Quasi-) one- and zero-dimensional electron systems can be created using a suspended helium film on a structured substrate. To investigate the relatio n between the curved surface and the properties of the electron system, the suspended helium film profile in a quasi-one-dimensional channel is measur ed interferometrically. It is shown that the film thickness decreases when the surface is charged with electrons at a density > 10(9) cm(-2). (C) 2000 Elsevier Science B.V. All rights reserved.