We have investigated the quasiparticle noise phenomena of Nb/AI/AlOx/Nb Jos
ephson tunnel junctions fabricated with a window geometry. In the subgap re
gion the I-V characteristics display excess currents at voltages correspond
ing to submultiples of the gap value. These structures can be ascribed to h
igher-order processes through the tunnel barrier. In the same voltage regio
n, measurements performed by using a low-frequency technique are strongly i
ndicative of shot noise levels higher than the expected ideal values. (C) 2
000 Elsevier Science B.V. All rights reserved.