We have studied the flux creep in a ring-shaped epitaxial YBa2Cu3O7-x (YBCO
) film. It is shown that in the temperature range between 10 and 60 K the f
lux creep can be described in terms of a thermally activated hopping of vor
tices over potential barriers. Taking into account the temperature dependen
ce of the critical current, all voltage-current (V-I) characteristics in th
e above temperature range may be merged onto a single curve. This procedure
provides the current dependence of the activation energy. The data obtaine
d at T < 10 K are not compatible with the assumption of thermal activation
and we interpret this as a crossover to the quantum flux-creep regime. (C)
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