Thermally activated flux creep in YBa2Cu3O7-x film

Citation
Il. Landau et Hr. Ott, Thermally activated flux creep in YBa2Cu3O7-x film, PHYSICA B, 284, 2000, pp. 791-792
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
1
Pages
791 - 792
Database
ISI
SICI code
0921-4526(200007)284:<791:TAFCIY>2.0.ZU;2-L
Abstract
We have studied the flux creep in a ring-shaped epitaxial YBa2Cu3O7-x (YBCO ) film. It is shown that in the temperature range between 10 and 60 K the f lux creep can be described in terms of a thermally activated hopping of vor tices over potential barriers. Taking into account the temperature dependen ce of the critical current, all voltage-current (V-I) characteristics in th e above temperature range may be merged onto a single curve. This procedure provides the current dependence of the activation energy. The data obtaine d at T < 10 K are not compatible with the assumption of thermal activation and we interpret this as a crossover to the quantum flux-creep regime. (C) 2000 Elsevier Science B.V. All rights reserved.