High-field magnetoresistance and Hall effect in Bi2Sr2CuOx crystals

Authors
Vedeneev, SI Jansen, AGM Wyder, P
Citation
Si. Vedeneev et al., High-field magnetoresistance and Hall effect in Bi2Sr2CuOx crystals, PHYSICA B, 284, 2000, pp. 1023-1024
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
284
Year of publication
2000
Part
1
Pages
1023 - 1024
Database
ISI
SICI code
0921-4526(200007)284:<1023:HMAHEI>2.0.ZU;2-2
Abstract
In-plane magnetoresistance (MR) and Hall effect of Bi2Sr2CuOx crystals with T-c = 4-9.5 K were investigated in DC magnetic fields up to 28 T. For T < 10 K the crystals show a classical positive MR. Above 14 K, a negative MR a ppears. The linear T-dependence of cot Theta(H) in the normal state closely resembles that of the normal-state resistivity as expected for a Fermi-liq uid picture. (C) 2000 Elsevier Science B.V. All rights reserved.