Origin of band and localized electron states in photoemission of NiO

Citation
J. Bala et al., Origin of band and localized electron states in photoemission of NiO, PHYS REV B, 61(20), 2000, pp. 13573-13587
Citations number
62
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
20
Year of publication
2000
Pages
13573 - 13587
Database
ISI
SICI code
0163-1829(20000515)61:20<13573:OOBALE>2.0.ZU;2-C
Abstract
In a variety of model studies it has been shown that the problem of a singl e hole in a Mott insulator can be quite well addressed by assuming that all that matters is the interaction between the propagating hole and the spin waves of the insulator. NiO has been often taken as the archetypical exampl e of a Mott insulator and recent angular resolved photoemission studies hav e revealed that holes in this material share both itinerant and localized a spects that are very hard to understand either in conventional band-structu re theory or from purely localized approaches. Starting from a strongly cou pled electronic multiband Hubbard model, we derive a generalized strong-cou pling spin-fermion model. The model includes the multiplet structure of the electronic excitations and describes the interaction of the O(2p) holes mo ving in oxygen bands with the spins localized on Ni ions. In linear spin-wa ve order we find an effective Hamiltonian describing the scattering of the bandlike holes on the spin waves. This problem is solved in rainbow order, and we find that the outcomes resemble well the experimental findings. In c ontrast to earlier impurity interpretations stressing spatial locality, we find that momentum dependencies are dominating the hole dynamics.