Intravacancy transition energies in 3C- and 4H-SiC

Authors
Zywietz, A Furthmuller, J Bechstedt, F
Citation
A. Zywietz et al., Intravacancy transition energies in 3C- and 4H-SiC, PHYS REV B, 61(20), 2000, pp. 13655-13658
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
20
Year of publication
2000
Pages
13655 - 13658
Database
ISI
SICI code
0163-1829(20000515)61:20<13655:ITEI3A>2.0.ZU;2-9
Abstract
Spin-polarized nb initio calculations are used to determine energy differen ces between ground and excited states of silicon and carbon vacancies in 3C - and 4H-SiC. The calculated transition energies are compared with recent f indings from photoluminescence and magnetic-resonance experiments.