Exciton-polariton eigenmodes in light-coupled In0.04Ga0.96As/GaAs semiconductor multiple-quantum-well periodic structures

Citation
Jp. Prineas et al., Exciton-polariton eigenmodes in light-coupled In0.04Ga0.96As/GaAs semiconductor multiple-quantum-well periodic structures, PHYS REV B, 61(20), 2000, pp. 13863-13872
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
20
Year of publication
2000
Pages
13863 - 13872
Database
ISI
SICI code
0163-1829(20000515)61:20<13863:EEILIS>2.0.ZU;2-A
Abstract
Features of exciton-polariton eigenmodes in a series of light-coupled In0.0 4Ga0.96As/GaAs semiconductor multiple quantum wells with varying number of quantum wells N from 1 to 100, and with various periodicities (Bragg, near- Bragg, and anti-Bragg), are studied in linear measurements of reflection, t ransmission, and absorption. At Bragg periodicity (period d = lambda(x)/2), a photonic band-gap mode grows in amplitude and increases linearly in line width with increasing N. The N times increased radiative damping rate is se en to arise from the light character of the eigenmode being swept out of a photonic band-gap structure. The slope of linewidth versus N gives the radi ative linewidth of the exciton. Away from Bragg periodicity two branches of energy levels can he resolved in absorption, corresponding to the N excito n-polariton normal modes in the multiple-quantum-well structure. Signatures of individual modes becoming optically active are observed in the rich str ucture of reflection spectra for changing quantum-well periodicity. Antiref lection coating of the samples is shown to be an effective way of thus isol ating the multiple-quantum-well response.