Excitons and charged excitons in semiconductor quantum wells

Citation
C. Riva et al., Excitons and charged excitons in semiconductor quantum wells, PHYS REV B, 61(20), 2000, pp. 13873-13881
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
20
Year of publication
2000
Pages
13873 - 13881
Database
ISI
SICI code
0163-1829(20000515)61:20<13873:EACEIS>2.0.ZU;2-9
Abstract
A variational calculation of the ground-stare energy of neutral excitons an d of positively and negatively charged excitons (trions) confined in a sing le-quantum well is presented. We study the dependence of the correlation en ergy and of the binding energy on the well width and on the hole mass. The conditional probability distribution for positively and negatively charged excitons is obtained, providing information on the correlation and the char ge distribution in the system. A comparison is made with available experime ntal data on trion binding energies in GaAs-, ZnSe-, and CdTe-based quantum well structures, which indicates that trions become localized with decreas ing quantum well width.