The observation of far-infrared stimulated emission from shallow donor tran
sitions in silicon is reported. Lasing with a wavelength of 59 mu m due to
the neutral donor intracenter 2p(0) --> ls(E) transition in Si:P pumped by
CO2 laser radiation is obtained. Populations of D-0 and D- center states an
d the balance of the radiation absorption and amplification are theoretical
ly analyzed.