PREDICTMOS - a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations

In circuit design and device scaling investigations, there is still a deman d for improved analytical models of MOSFETs with less fitting parameters an d a good scalability. In this paper, PREDICTMOS-a predictive compact model for structure oriented simulation of MOS devices is presented which has bee n developed by use of strongly physics-based model equations. For threshold voltage, surface potential in weak inversion, and currents in strong inver sion including the saturation regime, the equations have been derived using our recently published conformal mapping techniques for solving the two-di mensional Poisson equation, and a new way to solve the transistor current d ifferential equation. They make use of real structural parameters without a ny need of physically meaningless fitting parameters. This results in a str ong link between electrical parameters and the process and layout data of t he device and an excellent scalability while keeping physical insight. PRED ICTMOS has been implemented in the ELDO circuit simulator. Its results ill comparison with numerical device simulations and measurements show good agr eement down to dimensions of 0.1 mu m. (C) 2000 Elsevier Science Ltd. All r ights reserved.