Low temperature microcrystalline silicon thin film resistors on glass substrates

Doped microcrystalline silicon (mu c-Si) thin film resistors have been proc essed at low temperatures (<300 degrees C) using direct deposition in an el ectron cyclotron resonance high density plasma tool. These n-type doped mu c-Si films (n-type mu c-Si) have been deposited on Coming 1737 glass at ele ctrode temperatures of 100-300 degrees C. The impact of deposition paramete rs on the conductivity and crystallinity of the films has been investigated . We obtained conductive films at electrode temperatures as low as 100 degr ees C at higher RF substrate bias (30 W) and silane flow rate (3 sccm). Thi n film resistors were fabricated using films deposited under these conditio ns. The temperature coefficient of resistivity of these devices is less tha n 1%/K. The activation energies for these devices are 0.07-0.13 eV in the 2 5-150 degrees C range. A critical minimum deposition time was found. in exc ess of which the film conductivity does not change. (C) 2000 Elsevier Scien ce Ltd. All rights reserved.