A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Authors
Niu, GF Mathew, SJ Cressler, JD Subbanna, S
Citation
Gf. Niu et al., A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1187-1189
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
7
Year of publication
2000
Pages
1187 - 1189
Database
ISI
SICI code
0038-1101(200007)44:7<1187:ANCRRM>2.0.ZU;2-M
Abstract
A resistance ratio method for electrical effective channel length and serie s resistance extraction is developed and verified on an advanced 0.35 mu m LDD CMOS technology. This method avoids the gate bias range optimization re quired in the widely used "shift-and-ratio" (S&R) method, which is usually technology specific, while retaining the single transistor algorithm nature of S&R. (C) 2000 Elsevier Science Ltd. All rights reserved.