Analog performance and application of graded-channel fully depleted SOI MOSFETs

Authors
Pavanello, MA Martino, JA Dessard, V Flandre, D
Citation
Ma. Pavanello et al., Analog performance and application of graded-channel fully depleted SOI MOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1219-1222
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
7
Year of publication
2000
Pages
1219 - 1222
Database
ISI
SICI code
0038-1101(200007)44:7<1219:APAAOG>2.0.ZU;2-Y
Abstract
The performances of the single-transistor operational transconductance ampl ifiers (OTAs) implemented using graded-channel (GC) and a conventional full y depleted silicon-on-insulator nMOSFETs are compared. Improvements of the DC gain and unity-gain frequency resulting from the extremely reduced outpu t conductance and the increased transconductance in the GC devices are disc ussed, based on experimental results, establishing design guidelines in ord er to aim at GC micropower or wide bandwidth OTAs. (C) 2000 Elsevier Scienc e Ltd. All rights reserved.