The performances of the single-transistor operational transconductance ampl
ifiers (OTAs) implemented using graded-channel (GC) and a conventional full
y depleted silicon-on-insulator nMOSFETs are compared. Improvements of the
DC gain and unity-gain frequency resulting from the extremely reduced outpu
t conductance and the increased transconductance in the GC devices are disc
ussed, based on experimental results, establishing design guidelines in ord
er to aim at GC micropower or wide bandwidth OTAs. (C) 2000 Elsevier Scienc
e Ltd. All rights reserved.