Flicker noise in deep submicron nMOS transistors

This paper describes the low-frequency noise behaviour of n-channel MOSFETs fabricated in a 0.1 mu m technology. It is shown that the spectra are pred ominantly of the l/f-type for some part of the frequency range investigated . For some devices, two l/f-type parts occur, one at low and another at "hi gh" frequencies. separated by a plateau. A careful analysis of the drain cu rrent or gate bias dependence of the noise spectral density reveals that th e low-frequency l/f-type noise is governed by the fluctuations in the serie s resistance region of the devices. The corresponding Hooge parameter alpha (H) is of the order of 10(-4). For the l/f-like noise occurring at "high" f requencies, it is observed that it can be ascribed to fluctuations in the c hannel, giving rise to a high value of alpha(H) of similar to 10(-3) (from 2.5 x 10(-3)-8 x 10(-3)). (C) 2000 Elsevier Science Ltd. All rights reserve d.