Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures

Authors
Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation
Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures, SOL ST ELEC, 44(7), 2000, pp. 1261-1265
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
7
Year of publication
2000
Pages
1261 - 1265
Database
ISI
SICI code
0038-1101(200007)44:7<1261:SOGHBT>2.0.ZU;2-X
Abstract
The de characteristics of pnp GaN/AlGaN heterojunction bipolar transistors are simulated using a quasi-3D-model. The effects of base doping and thickn ess, contact geometry and device operating temperature on de current gain h ave been examined. Maximum gains of similar to 50 are expected for high qua lity materials and an optimized layer design. For similar layer thicknesses , npn devices have higher gains than the pnp structures, but the latter doe s not suffer from a high base sheet resistance. (C) 2000 Elsevier Science L td. All rights reserved.